High throughput is reached by increasing the wafer load in the process using wafer stacks, where the wafer surfaces are touching each other. The interactions between phosphorus diffusion and thermal oxidation of the stack process approach are examined in detail. Further, a hypothesis for the oxygen gas transport mechanism into the wafer gap is stated and confirmed by experiments and simulation. Further understanding of the stack diffusion approach is generated when investigating boron-doping processes.
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Veröffentlichung: | 07.12.2023 |
Höhe/Breite/Gewicht | H 21 cm / B 14,8 cm / - |
Seiten | 139 |
Art des Mediums | Buch [Taschenbuch] |
Preis DE | EUR 70.00 |
Preis AT | EUR 72.00 |
Reihe | Solare Energie- und Systemforschung / Solar Energy and Systems Research |
ISBN-13 | 978-3-839-61966-7 |
ISBN-10 | 3839619661 |